JLCPCB SMT Parts Library & Component Sourcing
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Memory
(42759)- DDR SDRAM (1007)
- DRAM (423)
- EEPROM (10305)
- eMMC (286)
- Font chips (38)
- FRAM (554)
- Memory - Configuration Proms for FPGAs (104)
- Memory - Serial MCP (Multi Chip Package) (59)
- Memory Controllers (35)
- NAND FLASH (2058)
- Non-Volatile Memory (ROM) (942)
- NOR FLASH (9928)
- nvSRAM (2)
- PSRAM (3)
- Random Access Memory (RAM) (443)
- SDRAM (4436)
- SRAM (12136)
- Manufacturer
- ABLIC
- Adafruit Industries
- Alliance Memory
- AMD(Advanced Micro Devices)
- AMD/XILINX
- AMI SEMICONDUCTOR
- Ampleon
- Analog Devices
- Analog Devices Inc./Maxim Integrated
- AP Memory
- Asahi Kasei Microdevices
- ATO SOLUTION Co ., LTD
- ATP Electronics, Inc.
- BL(Shanghai Belling)
- BOYAMICRO
- Bulgin
- CATALYST(CSI)
- Chingis Tech
- COREX
- Creat Storage World
- PackageType
- 100-CABGA (6x6)
- 100-LQFP (14x20)
- 100-TQFP
- 100-TQFP (14x14)
- 100-TQFP (14x20)
- 102-VFBGA (9x14)
- 11.5x13x0.8mm
- 119-PBGA (14x22)
- 121-FBGA (6.5x8)
- 128-TQFP (14x20)
- 132-PQFP (24.13x24.13)
- 134-FBGA (10x11.5)
- 134-FBGA (11x11.5)
- 134-VFBGA (10x11.5)
- 144-BGA
- 144-FBGA (11x18.5)
- 144-MiniBGA (12x12)
- 152-VFBGA (14x14)
- 15x11x1.0mm
- 16-PinSOP
- Block Erase Time(tBE)
- 0.12s@(32KB)
- 0.15s@(32KB)
- 0.16s
- 0.17s
- 0.1s@(32KB)
- 0.24s@(32KB)
- 0.25s
- 0.25s@(32KB)
- 0.25s@(64KB)
- 0.2s@(32KB)
- 0.2s@(64KB)
- 0.3s
- 0.3s@(32KB)
- 0.5s
- 0.5s@(32KB)
- 0.5s@(64KB)
- 0.65s@(64KB)
- 1.5ms
- 1.7s
- 10.5ms
- Character Set
- GB18030
- GB2312
- GBK
- UNICODE
- Clock Frequency
- 0MHz~20MHz
- 0MHz~3MHz
- 0kHz~100kHz
- 0kHz~400kHz
- 4kHz~1MHz
- 0.01MHz~20MHz
- 25kHz~1MHz
- 100kHz
- 100kHz~1MHz
- 100kHz~400kHz
- 125kHz
- 0.25MHz~2MHz
- 400kHz
- 400kHz~1000kHz
- 400kHz~1MHz
- 0.5MHz~2MHz
- 500kHz~2MHz
- 1000kHz
- 1MHz
- 1MHz~10MHz
- Controller Type
- NAND FLASH-USB
- Power monitor
- SRAM
- Current - Supply
- 50uA
- 70uA
- 90uA
- 100uA
- 175uA
- 200uA
- 220uA
- 250uA
- 300uA
- 400uA
- 0.71mA
- 1000uA
- 1mA
- 1.1mA
- 1.2mA
- 1300uA
- 1.5mA
- 1500uA
- 2mA
- 2.3mA
- Data Retention - TDR (Year)
- 10 years
- 100 years
- 100年
- 120 years
- 20 years
- 200 years
- 20年
- 25 years
- 40 Years
- 50 years
- 5年
- Interface
- eMMC 5.0
- eMMC 5.1
- I2C
- JEDEC/MMCA 5.0
- JEDEC/MMCA 5.1
- Parallel Port
- SD2.0
- SD3.0
- Single Bus
- SPI
- UFS
- UFS2.1
- UFS2.2
- 单总线
- Memory Format
- DRAM
- EPROM
- MASK ROM
- MRAM
- OTP EPROM
- PROM
- RLDRAM
- SDRAM DDR
- SDRAM DDR2
- SDRAM DDR3
- SDRAM DDR3L
- SDRAM DDR4
- SDRAM DDR5
- SDRAM LPDDR
- SDRAM LPDDR2
- SDRAM LPDDR3
- SDRAM LPDDR4
- SDRAM LPDDR4X
- SDRAM SLPDDR4
- SGRAM GDDR6
- Memory Size
- 1.125Mbit
- 1.152Mbit
- 1.5Kbit
- 1024bit
- 1024Kbit
- 128bit
- 128GB
- 128Gbit
- 128Kbit
- 128Mbit
- 144Kbit
- 144Mbit
- 16GB
- 16Gbit
- 16Kbit
- 16Mbit
- 18Kbit
- 18Mbit
- 1Gbit
- 1Kbit
- Operating Temperature
- -20℃~+125℃
- -20℃~+70℃
- -20℃~+85℃
- -25℃~+70℃
- -25℃~+85℃
- -30℃~+100℃
- -30℃~+85℃
- -40℃~+105℃
- -40℃~+125℃
- -40℃~+145℃
- -40℃~+150℃
- -40℃~+70℃
- -40℃~+80℃
- -40℃~+85℃
- -40℃~+90℃
- -40℃~+95℃
- -45℃~+85℃
- -55℃~+125℃
- 0℃~+125℃
- 0℃~+70℃
- Page Program time (TPP)
- 0.4ms
- 0.5ms
- 0.7ms
- 1.5ms
- 1.6ms
- 1300us
- 1ms
- 200us
- 20us
- 220us
- 240us
- 250us
- 25us
- 300us
- 30us
- 320us
- 330us
- 340us
- 350us
- 360us
- Page Programming Time (Tpp)
- 0.12ms
- 0.14ms
- 0.15ms
- 0.16ms
- 0.18ms
- 0.33ms
- 0.45ms
- 0.64ms
- 0.73ms
- 0.75ms
- 0.85ms
- 1.1ms
- 1.25ms
- 1.2ms
- 1.35ms
- 1.3ms
- 1.4ms
- 1.5ms
- 1.6ms
- 1.7ms
- Programmable Type
- EEPROM
- FLASH
- OTP
- Random Read/Write (IOPS)
- 12k/22k iops
- 12k/7.8k iops
- 14k/22k iops
- 14k/7.8k iops
- 15K/20K iops
- 3000/1300 iops
- 3000/2000 iops
- 30K/50K iops
- 3200/1800 iops
- 3419/2154 iops
- 3800/5000 iops
- 3900/1900 iops
- 4000/4300 iops
- 4866/1542 iops
- 5200/9800 iops
- 6.5K/12K iops
- 6500/1300 iops
- 8000/7000 iops
- 8234/5582 iops
- 8k/17k iops
- Refresh Current
- 200uA
- 230uA
- 530uA
- 2mA
- 3mA
- 4mA
- 5mA
- 6mA
- 8mA
- 10mA
- 11mA
- 12mA
- 13mA
- 14mA
- 15mA
- 20mA
- 22mA
- 25mA
- 68mA
- Sequential Read/Write (MB/s)
- 105/- MB/s
- 105/41 MB/s
- 125/300 MB/s
- 130/22 MB/s
- 145/245 MB/s
- 150/245 MB/s
- 150/300MB/s
- 152/- MB/s
- 157/37 MB/s
- 160/- MB/s
- 160/110 MB/s
- 160/120 MB/s
- 160/14 MB/s
- 160/15 MB/s
- 160/17 MB/s
- 160/20 MB/s
- 160/300 MB/s
- 160/55 MB/s
- 178/26 MB/s
- 178/45 MB/s
- Sleep mode current (Izz)
- 0.1uA
- 3uA
- 4uA
- 5uA
- 8uA
- 10uA
- 12uA
- 20uA
- Standby Current
- 1uA~5uA
- 2uA~13uA
- 5uA
- 8uA
- 10uA
- Standby Current(Isb)
- 100nA
- 2.3uA
- 2.7uA
- 3uA
- 3.2uA
- 4uA
- 5uA
- 6uA
- 7.5uA
- 9uA
- 10uA
- 15uA
- 20uA
- 25uA
- 30uA
- 45uA
- 50uA
- 80uA
- 90uA
- 100uA
- Type
- NAND Flash
- NAND Flash,LPDDR2
- NAND Flash,LPDRAM
- NOR Flash
- Voltage - Supply
- 1V~2.6V
- 1.06V~1.95V
- 1.067V~1.166V
- 1.14V~1.26V
- 1.14V~1.3V
- 1.14V~1.6V
- 1.2V
- 1.2V~2.5V
- 1.28V~1.42V
- 1.28V~1.45V
- 1.28V~1.575V
- 1.283V~1.45V
- 1.35V
- 1.35V~1.45V
- 1.35V~1.575V
- 1.35V~1.5V
- 1.4V~1.8V
- 1.425V~1.575V
- 1.5V
- 1.5V~1.575V
- Word Size
- 16x16
- 16~192
- 24x24
- 5x7~16
- 5x7~24
- Write Cycle Endurance
- 1,000,000 Times
- 1,200,000 times
- 10,000 times
- 1000 Times
- 100000 Times
- 10000000Times
- 2,000,000 times
- 200,000 Times
- 300,000 times
- 4000000 times
- 50,000 times
- 500,000 times
- 600000 times
- 900,000 times
- Write Cycle Time(Tw)
- 0.8ms
- 1.2ms
- 1.5ms
- 1.9ms
- 100ns
- 10ms
- 10ns
- 11ns
- 120ns
- 12ns
- 150ns
- 15ns
- 16ms
- 1ms
- 2.5ns
- 2.6ns
- 2.8ns
- 200ns
- 20ms
- 20ns
- Write Cycle Time(tWC)
- 0.4ms
- 200us
- 20ns
- 250us
- 25ns
- 300us
- 30ns
- 35ns
- 45ns
- 600us
- configuration
- MLC
- SLC
- TLC
Quantity
-
New look survey 
42759 items in total
- 1
- 2
- 3
- 4
- 5
- 6
- 1711
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