JLCPCB SMT Parts Library & Component Sourcing
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Silicon Carbide (SiC) Devices
(2520)- Manufacturer
- (DIOTEC)
- AnBon
- ANHI
- BASiC Semiconductor
- BOURNS
- Bruckewell
- CENGOL
- Central Semicon
- CETC
- Comchip
- Convert Semiconductor
- Diodes Incorporated
- FUXINSEMI
- GeneSiC Semiconductor
- GPT
- HXY MOSFET
- Infineon Technologies
- InventChip
- KIA Semicon Tech
- KNSCHA
- PackageType
- AG-62mm
- AG-EASY1B-2
- D2PAK
- D2PAK-2(TO-263)
- D2PAK-3
- D2PAK-7
- D2PAK-7L
- D2PAK-HV
- D2PAK7
- D2PAK7(TO-263-7L-HV)
- D3PAK
- DFN(8x8)
- DFN-4(8x8)
- DFN-4-EP(8x8)
- DFN-5(8x8)
- DFN-8(4.9x5.8)
- DFN-8(5x6)
- DFN0808-A
- DFN5060
- DFN8080-5
- Configuration
- Half Bridge
- Three-Phase Bridge
- Continuous Drain Current
- 4A
- 4.7A
- 5A
- 5.2A
- 5.6A
- 6A
- 6.2A
- 6.4A
- 6.7A
- 6.8A
- 7A
- 7.4A
- 7.6A
- 9A
- 10A
- 11A
- 12A
- 13A
- 14A
- 17A
- Current - Continuous Drain(Id)
- 60A
- Current - Rectified
- 300mA
- 1A
- 1.84A
- 2A
- 2.15A
- 3A
- 3.3A
- 4A
- 4.8A
- 5A
- 5.7A
- 5.8A
- 6A
- 7A
- 7.5A
- 7.6A
- 7.7A
- 8A
- 8.5A
- 8.6A
- Diode Configuration
- 1 pair common anode
- 1 pair in series
- 1 pair of common cathodes
- 2 independent
- Independent Type
- Drain - Source Breakdown Voltage
- 650V
- 700V
- 750V
- 900V
- 1000V
- 1200V
- 1700V
- 3300V
- Drain to Source Voltage
- 1200V
- Encapsulated Type
- Single Tube
- TO-263-7L
- FET Type
- 1 N-channel
- 2 N-Channel
- 4 N-channel
- Gate - Source Threshold Voltage
- 1.8V
- 2V
- 2.1V
- 2.2V
- 2.3V
- 2.4V
- 2.5V
- 2.6V
- 2.7V
- 2.75V
- 2.8V
- 2.9V
- 3V
- 3.2V
- 3.5V
- 3.6V
- 4V
- 4.3V
- 4.5V
- 5.7V
- Gate Charge(Qg)
- 115nC@800V
- Gate Threshold Voltage (Vgs(th)@Id)
- 2.6V
- Input Capacitance
- 116pF
- 186pF
- 194pF
- 198pF
- 215pF
- 238pF
- 260pF
- 275pF
- 289pF
- 324pF
- 414pF
- 617pF
- 632pF
- 707pF
- 760pF
- 895pF
- 920pF
- 940pF
- 950pF
- 1020pF
- Input Capacitance(Ciss@Vds)
- 1.893nF@1000V
- Operating Temperature
- -40℃~+150℃
- -40℃~+175℃
- -55℃~+150℃
- -55℃~+150℃@(Tj)
- -55℃~+175℃
- -55℃~+175℃@(Tj)
- -55℃~175℃
- Output Capacitance
- 10pF
- 12pF
- 13pF
- 16pF
- 24pF
- 39pF
- 48pF
- 59pF
- 66pF
- 69pF
- 80pF
- 103pF
- 124pF
- 125pF
- 127pF
- 129pF
- 171pF
- 180pF
- 190pF
- 200pF
- Pd - Power Dissipation
- 330W
- Power Dissipation
- 26W
- 32W
- 50W
- 54W
- 60W
- 62W
- 62.5W
- 65W
- 66.9W
- 68W
- 69W
- 74W
- 75W
- 78.4W
- 80W
- 83W
- 85W
- 86W
- 88W
- 94W
- RDS(on)
- 14mΩ@18V
- 15mΩ@15V
- 16mΩ@15V
- 19mΩ@18V
- 21mΩ@15V
- 22mΩ@18V
- 25mΩ@20V
- 27mΩ@18V
- 27mΩ@20V
- 28mΩ@18V
- 28mΩ@20V
- 30mΩ@18V
- 32mΩ@15V
- 32mΩ@18V
- 33mΩ@20V
- 35mΩ@18V
- 40mΩ@15V
- 40mΩ@18V
- 40mΩ@20V
- 40mΩ@40V,20A
- Reverse Leakage Current (Ir)
- 12nA@650V
- 25nA@650V
- 30nA@650V
- 73nA@650V
- 80nA@1.7kV
- 100nA@650V
- 150nA@1.7kV
- 150nA@650V
- 200nA@650V
- 230nA@600V
- 250nA@650V
- 300nA@600V
- 300nA@650V
- 400nA@420V
- 400nA@600V
- 400nA@650V
- 450nA@650V
- 0.5uA@650V
- 500nA@600V
- 500nA@650V
- Reverse Transfer Capacitance
- 0.7pF
- 1.4pF
- 1.6pF
- 1.8pF
- 2pF
- 2.1pF
- 2.2pF
- 2.4pF
- 2.6pF
- 3pF
- 3.8pF
- 3.9pF
- 4pF
- 4.1pF
- 4.3pF
- 4.5pF
- 5pF
- 6pF
- 6.7pF
- 7.5pF
- Reverse Transfer Capacitance (Crss@Vds)
- 10pF@1000V
- Total Gate Charge
- 101nC
- 110.8nC
- 112nC
- 114nC
- 118nC
- 120nC
- 121nC
- 133nC
- 15.8nC
- 160nC
- 162nC
- 164nC
- 188nC
- 18nC
- 200nC
- 204nC
- 207nC
- 21.8nC
- 21nC
- 222nC
- Type
- 1 N-channel
- Voltage - DC Reverse(Vr)
- 100V
- 300V
- 600V
- 650V
- 700V
- 1.2kV
- 1200V
- 1.23kV
- 1.7kV
- 1700V
- 3.3kV
- Voltage - Forward(Vf@If)
- 1.25V@10A
- 1.25V@12A
- 1.25V@16A
- 1.25V@20A
- 1.25V@4A
- 1.25V@6A
- 1.25V@8A
- 1.27V@10A
- 1.27V@4A
- 1.3V@100A
- 1.3V@10A
- 1.3V@15A
- 1.3V@16A
- 1.3V@20A
- 1.3V@2A
- 1.3V@30A
- 1.3V@4A
- 1.3V@6A
- 1.3V@8A
- 1.34V@6A
Quantity
-
New look survey 
2520 items in total
- 1
- 2
- 3
- 4
- 5
- 6
- 101
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