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  • Digital Transistors

    (3947)
  • Manufacturer
    • (DIOTEC)
    • amsem
    • Analog Devices
    • Analog Devices Inc./Maxim Integrated
    • BORN
    • CBI
    • Central Semicon
    • Comchip
    • Diodes Incorporated
    • Doeshare
    • Foshan Blue Rocket Elec
    • High Diode
    • HL(Haolin Elec)
    • HUXN
    • HXY MOSFET
    • Infineon Technologies
    • Infineon/Cypress Semicon
    • Jiangsu Changjing Electronics Technology Co., Ltd.
    • KEC Semicon
    • Kodenshi AUK
  • PackageType
    • CST-3
    • CST3
    • DFN-3(1.1x1)
    • DFN-3(1x0.6)
    • DFN-3(1x1)
    • DFN-3L(1x0.6)
    • DFN1010-3
    • DFN1010-6
    • DFN1412D-3
    • EMT-3
    • EMT-5
    • EMT-6
    • ES6
    • ESM
    • Mini5-G3-B
    • QFN-8
    • S-Mini
    • S-MiNi
    • SC-101(SOT-883)
    • SC-105AA
  • Collector Current (Ic)
    • 20mA
    • 30mA
    • 30mA;100mA
    • 50mA
    • 60mA
    • 70mA
    • 70mA;100mA
    • 80mA
    • 0.1A
    • 100mA
    • 100mA;1.8A
    • 100mA;150mA
    • 100mA;200mA
    • 100mA;500mA
    • 150mA
    • 200mA
    • 400mA
    • 500mA
    • 500mA;100mA
    • 600mA
  • Collector Cut-Off Current (Icbo)
    • 500nA
  • Collector-Emitter Breakdown Voltage (Vceo)
    • 12V
    • 15V
    • 15V;50V
    • 20V
    • 20V;50V
    • 30V
    • 40V
    • 40V;30V
    • 40V;50V
    • 50V
    • 50V;12V
    • 50V;15V
    • 50V;30V
    • 50V;40V
    • 50V;60V
    • 60V
    • 60V;50V
    • 70V
    • 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
    • 300mV@500uA,10mA
    • 300mV@50mA,2.5mA
    • 300mV@5mA,250uA
    • 300mV@5mA,500uA
  • DC Current Gain (hFE@Ic,Vce)
    • 1000@1A,5V
    • 100@10mA,10V
    • 100@10mA,1V;100@150mA,5V
    • 100@10mA,5V
    • 100@10uA,5V
    • 100@1A,5V
    • 100@1mA,5V
    • 100@1mA,5V;68@100mA,5V
    • 100@1mA,5V;82@50mA,5V
    • 100@500mA,2V
    • 100@50mA,5V
    • 100@5mA,10V
    • 100@5mA,5V
    • 115@100mA,2V
    • 120@10mA,5V
    • 120@1mA,5V
    • 120@5mA,10V
    • 120@5mA,5V
    • 125@800mA,1V
    • 130@300mA,5V
  • Input Resistor
    • 1kΩ
    • 2.2kΩ
    • 2.86kΩ
    • 4.7kΩ
    • 6.1kΩ
    • 10kΩ
    • 13kΩ
    • 22kΩ
    • 28.6kΩ
    • 47kΩ
    • 100kΩ
  • Input Voltage (VI(off)@Ic,Vce)
    • 300mV@100uA,5V
    • 500mV@0.1mA,5V
    • 500mV@100uA,5V
    • 600mV@100uA,5V
    • 650mV@100uA,5V
    • 700mV@100uA,5V
    • 750mV@100uA,5V
    • 800mV@100uA,5V
    • 900mV@100uA,5V
    • 1V
    • 1V@0.1mA,5V
    • 1V@100uA,5V
    • 1.1V@100uA,5V
    • 1.2V@100uA,5V
    • 1.2V@1mA,5V
    • 1.7V@100uA,5V
  • Input Voltage (VI(on)@Ic,Vce)
    • 500mV@2mA,300mV
    • 700mV@5mA,200mV
    • 750mV@5mA,0.3V
    • 800mV@10mA,0.3V
    • 800mV@1mA,0.3V
    • 800mV@20mA,0.3V
    • 900mV@5mA,0.3V
    • 1V@20mA,0.3V
    • 1.1V@2mA,0.3V
    • 1.1V@5mA,03V
    • 1.25V@20mA,0.3V
    • 1.3V@2mA,0.3V
    • 1.3V@5mA,0.2V
    • 1.3V@5mA,0.3V
    • 1.3V@5mA,300mV
    • 1.4V@10mA,0.3V
    • 1.4V@1mA,0.3V
    • 1.4V@1mA,300mV
    • 1.4V@20mA,500mA
    • 1.5V@1mA,0.3V
  • Operating Temperature
    • +150℃@(Tj)
    • -50℃~+150℃@(Tj)
    • -55℃~+150℃
    • -55℃~+150℃@(Tj)
  • Output Voltage (VO(on)@Io/Ii)
    • 70mV@5mA,500uA
    • 100mV@10mA,0.25mA
    • 100mV@10mA,500uA
    • 100mV@5mA,0.25mA
    • 100mV@5mA,2.5mA
    • 100mV@5mA,250uA
    • 200mV
    • 300mV
    • 300mV@10mA,0.5mA
    • 300mV@10mA,500uA
    • 300mV@50mA,2.5mA
    • 300mV@5mA,0.25mA
  • Power Dissipation (Pd)
    • 100mW
    • 120mW
    • 125mW
    • 0.15W
    • 150mW
    • 150mW;120mW
    • 180mW
    • 187mW
    • 0.2W
    • 200mW
    • 202mW
    • 230mW
    • 235mW
    • 246mW
    • 250mW
    • 254mW
    • 256mW
    • 260mW
    • 270mW
    • 280mW
  • Resistor Ratio
    • 0.047
    • 0.056
    • 0.185
    • 0.213
    • 0.47
    • 1.2
    • 2.1
    • 2.13
    • 4.5
    • 4.7
    • 1
    • 10
    • 21
  • Transistor Type
    • 1 NPN - bias preset
    • 1 NPN - Pre Biased
    • 1 NPN - pre-bias, 1 PNP
    • 1 NPN - Pre-Biased + Diode
    • 1 NPN - Pre-Biased,1 PNP
    • 1 NPN - Pre-Biased,1 PNP - Pre-Biased
    • 1 NPN, 1 PNP-Pre-Biased
    • 1 NPN,1 PNP - Pre-Biased
    • 1 NPN-prebias, 1 NPN
    • 1 PNP pre-bias
    • 1 PNP-Prebiased + Diode
    • 1PCSNPN-预偏置,1PCSNPN
    • 1PCSNPN-预偏置,1PCSPNP-预偏置(基集电极结)
    • 1PCSPNP-预偏置,1PCSNPN
    • 2 NPN - Pre-Biased
    • 2 NPN - pre-biased (emitter coupled)
    • 2 NPN-Pre-Biased
    • 2 PNP - pre-bias
    • 2 PNP - pre-bias (emitter-coupled)
    • 2 PNP - Pre-Biased
  • Transition Frequency (fT)
    • 200MHz
    • 250MHz
Results remaining: 3947
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