JLCPCB SMT Parts Library & Component Sourcing
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MOSFETs
(4242)
- Manufacturer
- (DIOTEC)
- A Power microelectronics
- AF
- Agertech
- ALLPOWER(ShenZhen Quan Li Semiconductor)
- Alpha & Omega Semicon
- AnBon
- ARK micro
- Ascend
- ASDsemi
- Axelite Tech
- BASiC Semiconductor
- BPS(Bright Power Semicon)
- CASS
- CET(Chino-Excel Tech)
- Cheng Xin Wei Tech
- ChipLink Tech
- Chongqing Pingwei Tech
- Cmos
- CRMICRO
- PackageType
- AlphaDFN-10(2.98x1.49)
- CPC-8
- CPH-3
- CSP(1.33x1.33)
- D2PAK
- D2PAK(TO-263)
- D2PAK-7
- DFN(2x2)
- DFN(3.3x3.3)
- DFN(3x3)
- DFN(5x6)
- DFN(8x8)
- DFN-12-EP(4x4)
- DFN-16(5x6)
- DFN-3(1x0.6)
- DFN-3(8x8)
- DFN-3L(0.6x0.8)
- DFN-3L(1x0.6)
- DFN-5(4.9x5.9)
- DFN-5(5.1x6.1)
- Continuous Drain Current (Id)
- null
- 20mA
- 100mA
- 115mA
- 130mA
- 200mA
- 210mA
- 220mA
- 235mA
- 250mA
- 265mA
- 270mA
- 280mA
- 295mA
- 300mA
- 320mA
- 340mA
- 350mA
- 360mA
- 400mA
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 0.021mΩ@10V,56A
- 0.44mΩ@10V,46A
- 0.52mΩ@10V,30A
- 0.52mΩ@10V,50A
- 0.55mΩ@10V,50A
- 0.62mΩ@10V,20A
- 0.64mΩ@10V,50A
- 0.65mΩ@10V,50A
- 0.67mΩ@10V,50A
- 0.7mΩ@10V,160A
- 0.7mΩ@10V,50A
- 0.71mΩ@10V,20A
- 0.72mΩ@10V,30A
- 0.73mΩ@10V,25A
- 0.75mΩ@10V,80A
- 0.76mΩ@10V,50A
- 0.8mΩ@10V,50A
- 0.82mΩ@50A,10V
- 0.9mΩ@10V,50A
- 0.9mΩ@25A,10V
- Drain Source Voltage (Vdss)
- null
- 12V
- 15V
- 16V
- 18V
- 19V
- 20V
- 24V
- 25V
- 26V
- 30V
- 35V
- 36V
- 40V
- 45V
- 50V
- 55V
- 60V
- 63V
- 65V
- Gate Threshold Voltage (Vgs(th)@Id)
- 3.7mV@250uA
- 450mV@250uA
- 500mV@250uA
- 0.54V@250uA
- 0.6V@250uA
- 600mV@250uA
- 610mV@250uA
- 0.65V@250uA
- 0.67V@250uA
- 0.68V@250uA
- 690mV@250uA
- 0.7V@250uA
- 700mV 250uA
- 700mV@250uA
- 750mV@250uA
- 780mV@250uA
- 800mV@250uA
- 800mV@400uA
- 850mV@250uA
- 0.9V@250uA
- Input Capacitance (Ciss@Vds)
- 1.027pF@15V
- 1.317pF@15V
- 1.5pF@25V
- 4.39pF@25V
- 5.2pF@6V
- 12.3pF@25V
- 12.8pF@25V
- 15pF@10V
- 15pF@25V
- 18pF@30V
- 20pF@30V
- 20.2pF@30V
- 21pF@25V
- 23.6pF@10V
- 24pF@10V
- 26pF@20V
- 27pF@25V
- 30pF@25V
- 32.58pF@25V
- 33pF@10V
- Operating Temperature
- +150℃@(Tch)
- +150℃@(Tj)
- +175℃@(Tj)
- -40℃~+150℃@(Tj)
- -40℃~+175℃@(Tj)
- -50℃~+150℃@(Tj)
- -55℃~+150℃
- -55℃~+150℃@(Tj)
- -55℃~+175℃@(Tj)
- -55℃~+185℃@(Tj)
- -65℃~+150℃@(Tj)
- 150℃
- Power Dissipation (Pd)
- null
- 125mW
- 0.15W
- 150mW
- 180mW
- 200mW
- 225mW
- 250mW
- 285mW
- 0.29W
- 300mW
- 310mW
- 330mW
- 335mW
- 340mW
- 0.35W
- 350mW
- 360mW
- 400mW
- 460mW
- Reverse Transfer Capacitance (Crss@Vds)
- 0.4pF@100V
- 0.45pF@400V
- 0.5pF@100V
- 0.6pF@400V
- 0.65pF@100V
- 0.74pF@25V
- 0.75pF@25V
- 0.8pF@100V
- 0.84pF@100V
- 0.84pF@25V
- 0.9pF@100V
- 1pF@100V
- 1pF@25V
- 1.1pF@100V
- 1.2pF@100V
- 1.4pF@50V
- 1.43pF@100V
- 1.47pF@100V
- 1.5pF@100V
- 1.7pF@100V
- Total Gate Charge (Qg@Vgs)
- 0.3nC@4.5V
- 0.45nC@4.5V
- 0.49nC@30V
- 0.5nC@10V
- 0.5nC@4.5V
- 0.68nC@4.5V
- 0.7nC@10V
- 0.8nC@5V
- 1.1nC@2.5V
- 1.24nC@4.5V
- 1.4nC@4.5V
- 1.55nC@±5V
- 1.5nC@10V
- 1.7nC@10V
- 1.7nC@4.5V
- 1.8nC@4.5V
- 1.9nC@10V
- 10.2nC@0~10V
- 10.2nC@5V
- 10.3nC@0~10V
- Type
- 1PCSN-Channel&1PCSP-Channel
- 1PCSNChannel
- 1PCSNChannel&1PCSPChannel(Half Bridge)
- 1PCSPChannel
- 1个N沟道和1个P沟道
- 2 N-Channel
- 2 N-Channel Common Source
- 2 N-Channel(Half Bridge)
- 2 P-Channel
- 2PCSNChannel(Common Drain)
- 2个N沟道
- 2个N沟道(共漏)
- 2个N沟道(半桥)
- 2个P沟道
- DualN-Channel
- DualP-Channel
- Gallium nitride(GaN)Power transistor
- N Channel
- N-Channel
- N-Channel&P-Channel
Quantity
-
New look survey 
4242 items in total
- 1
- 2
- 3
- 4
- 5
- 6
- 170
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