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  • Silicon Carbide Field Effect Transistor (MOSFET)

    (641)
  • Manufacturer
    • AnBon
    • ANHI
    • BASiC Semiconductor
    • Bruckewell
    • Convert Semiconductor
    • Diodes Incorporated
    • GeneSiC Semiconductor
    • HXY MOSFET
    • Infineon Technologies
    • InventChip
    • KNSCHA
    • Littelfuse
    • Littelfuse/IXYS
    • MCC(Micro Commercial Components)
    • MDD(Microdiode Semiconductor)
    • Microchip Tech
    • Navitas
    • onsemi
    • PN Junction Semiconductor
    • Power X
  • PackageType
    • AG-62mm
    • AG-EASY1B-2
    • D2PAK
    • D2PAK-7
    • D2PAK-7L
    • D2PAK7
    • D2PAK7(TO-263-7L-HV)
    • D3PAK
    • DFN8080-8
    • H-PSOF8L(9.9x11.68)
    • H2PAK-7
    • HiP-247
    • HIP-247-4
    • HiP-247-4
    • HU3PAK
    • PowerVDFN-8
    • SOT-227
    • SOT-227(ISOT-OP)
    • SP1F
    • SP3F
  • Configuration
    • Half Bridge
    • Three-Phase Bridge
  • Continuous Drain Current
    • 4A
    • 4.7A
    • 5A
    • 5.2A
    • 5.6A
    • 6A
    • 6.2A
    • 6.4A
    • 6.7A
    • 6.8A
    • 7A
    • 7.4A
    • 7.6A
    • 9A
    • 10A
    • 11A
    • 12A
    • 13A
    • 14A
    • 17A
  • Current - Continuous Drain(Id)
    • 60A
  • Drain - Source Breakdown Voltage
    • 650V
    • 700V
    • 750V
    • 900V
    • 1000V
    • 1200V
    • 1700V
    • 3300V
  • Drain to Source Voltage
    • 1200V
  • Encapsulated Type
    • Single Tube
    • TO-263-7L
  • FET Type
    • 1 N-channel
    • 2 N-Channel
    • 4 N-channel
  • Gate - Source Threshold Voltage
    • 1.8V
    • 2V
    • 2.1V
    • 2.2V
    • 2.3V
    • 2.4V
    • 2.5V
    • 2.6V
    • 2.7V
    • 2.75V
    • 2.8V
    • 2.9V
    • 3V
    • 3.2V
    • 3.5V
    • 3.6V
    • 4V
    • 4.3V
    • 4.5V
    • 5.7V
  • Gate Charge(Qg)
    • 115nC@800V
  • Gate Threshold Voltage (Vgs(th)@Id)
    • 2.6V
  • Input Capacitance
    • 116pF
    • 186pF
    • 194pF
    • 198pF
    • 215pF
    • 238pF
    • 260pF
    • 275pF
    • 289pF
    • 324pF
    • 414pF
    • 617pF
    • 632pF
    • 707pF
    • 760pF
    • 895pF
    • 920pF
    • 940pF
    • 950pF
    • 1020pF
  • Input Capacitance(Ciss@Vds)
    • 1.893nF@1000V
  • Operating Temperature
    • -40℃~+150℃
    • -40℃~+175℃
    • -55℃~+150℃
    • -55℃~+150℃@(Tj)
    • -55℃~+175℃
    • -55℃~+175℃@(Tj)
    • -55℃~175℃
  • Output Capacitance
    • 10pF
    • 12pF
    • 13pF
    • 16pF
    • 24pF
    • 39pF
    • 48pF
    • 59pF
    • 66pF
    • 69pF
    • 80pF
    • 103pF
    • 124pF
    • 125pF
    • 127pF
    • 129pF
    • 171pF
    • 180pF
    • 190pF
    • 200pF
  • Pd - Power Dissipation
    • 330W
  • Power Dissipation
    • 26W
    • 32W
    • 50W
    • 54W
    • 60W
    • 62W
    • 62.5W
    • 65W
    • 66.9W
    • 68W
    • 69W
    • 74W
    • 75W
    • 78.4W
    • 80W
    • 83W
    • 85W
    • 86W
    • 88W
    • 94W
  • RDS(on)
    • 14mΩ@18V
    • 15mΩ@15V
    • 16mΩ@15V
    • 19mΩ@18V
    • 21mΩ@15V
    • 22mΩ@18V
    • 25mΩ@20V
    • 27mΩ@18V
    • 27mΩ@20V
    • 28mΩ@18V
    • 28mΩ@20V
    • 30mΩ@18V
    • 32mΩ@15V
    • 32mΩ@18V
    • 33mΩ@20V
    • 35mΩ@18V
    • 40mΩ@15V
    • 40mΩ@18V
    • 40mΩ@20V
    • 40mΩ@40V,20A
  • Reverse Transfer Capacitance
    • 0.7pF
    • 1.4pF
    • 1.6pF
    • 1.8pF
    • 2pF
    • 2.1pF
    • 2.2pF
    • 2.4pF
    • 2.6pF
    • 3pF
    • 3.8pF
    • 3.9pF
    • 4pF
    • 4.1pF
    • 4.3pF
    • 4.5pF
    • 5pF
    • 6pF
    • 6.7pF
    • 7.5pF
  • Reverse Transfer Capacitance (Crss@Vds)
    • 10pF@1000V
  • Total Gate Charge
    • 101nC
    • 110.8nC
    • 112nC
    • 114nC
    • 118nC
    • 120nC
    • 121nC
    • 133nC
    • 15.8nC
    • 160nC
    • 162nC
    • 164nC
    • 188nC
    • 18nC
    • 200nC
    • 204nC
    • 207nC
    • 21.8nC
    • 21nC
    • 222nC
  • Type
    • 1 N-channel
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